Electronic structure and conduction in a metal-semiconductor digital composite: ErAs : InGaAs

Citation
Dc. Driscoll et al., Electronic structure and conduction in a metal-semiconductor digital composite: ErAs : InGaAs, APPL PHYS L, 78(12), 2001, pp. 1703-1705
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
12
Year of publication
2001
Pages
1703 - 1705
Database
ISI
SICI code
0003-6951(20010319)78:12<1703:ESACIA>2.0.ZU;2-O
Abstract
We have grown epitaxial superlattice structures of layers of semimetallic E rAs particles embedded in an InGaAs matrix on (001) Fe-doped InP substrates . Temperature-dependent Hall measurements, x-ray diffraction, and transmiss ion electron microscopy were performed on the materials. The carrier mobili ty and the temperature dependence of the charge density imply conduction in the InGaAs matrix. We calculate an offset between the conduction-band mini mum of the InGaAs matrix and the Fermi level of the ErAs particles that is strongly dependent on the amount of ErAs deposited. As the size of the ErAs particles increases, the Fermi level decreases from similar to0.01 eV abov e the InGaAs conduction-band edge to similar to0.2 eV below the InGaAs cond uction-band edge and the electrical conduction properties change from metal lic to semiconducting. (C) 2001 American Institute of Physics.