Probing radicals in hot wire decomposition of silane using single photon ionization

Citation
Hl. Duan et al., Probing radicals in hot wire decomposition of silane using single photon ionization, APPL PHYS L, 78(12), 2001, pp. 1784-1786
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
12
Year of publication
2001
Pages
1784 - 1786
Database
ISI
SICI code
0003-6951(20010319)78:12<1784:PRIHWD>2.0.ZU;2-J
Abstract
Radicals produced by the hot wire-induced decomposition of silane have been identified using vacuum ultraviolet single photon ionization (SPI). This l aser-based technique uses 118 nm photons (10.5 eV) to ionize gas phase spec ies; the resulting photoions are detected using time-of-flight mass spectro metry. The major silicon-containing gas-phase species identified by SPI dur ing hot-wire activation of silane gas are Si, SiH3, and Si2H6. These result s demonstrate that single photon ionization can be a powerful probe for in situ, real-time detection of multiple species in hot wire chemical vapor de position. (C) 2001 American Institute of Physics.