Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures

Citation
J. Aarik et al., Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures, APPL SURF S, 173(1-2), 2001, pp. 15-21
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
173
Issue
1-2
Year of publication
2001
Pages
15 - 21
Database
ISI
SICI code
0169-4332(20010322)173:1-2<15:PTIHDT>2.0.ZU;2-V
Abstract
High-temperature cubic phase of HfO2 was observed by reflection high-energy electron diffraction in nanocrystalline thin films grown by atomic layer d eposition from HfCl4 and H2O at substrate temperatures of 880-940 degreesC. The phase was formed at properly chosen precursor doses and it was observe d on the surface of films, which according to X-ray diffraction data consis ted of monoclinic HfO2. The thickness of the surface layer, in which the cu bic phase appeared, was estimated to be 5-10 nm. According to Auger electro n spectroscopy data, formation of the cubic phase was accompanied with an i ncrease in the ionicity of O-Hf bonds. (C) 2001 Elsevier Science B.V. All r ights reserved.