Influence of sputtering pressure on the structure and properties of ZrO2 films prepared by rf reactive sputtering

Citation
Pt. Gao et al., Influence of sputtering pressure on the structure and properties of ZrO2 films prepared by rf reactive sputtering, APPL SURF S, 173(1-2), 2001, pp. 84-90
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
173
Issue
1-2
Year of publication
2001
Pages
84 - 90
Database
ISI
SICI code
0169-4332(20010322)173:1-2<84:IOSPOT>2.0.ZU;2-P
Abstract
Zirconium oxide (ZrO2) films have been prepared by rf reactive magnetron sp uttering at different sputtering pressures. It is found that the monoclinic phase is the dominant phase in the films and there is a small fraction of tetragonal phase in the films prepared in the low pressure region. The infl uence of sputtering pressure on the microstructure. residual stress and opt ical properties of the films has been studied. The films have been characte rised by X-ray diffraction (XRD), scanning electron microscopy (SEM). energ y dispersive X-ray (EDX) and optical spectroscopy. (C) 2001 Elsevier Scienc e B.V. All rights reserved.