Pt. Gao et al., Influence of sputtering pressure on the structure and properties of ZrO2 films prepared by rf reactive sputtering, APPL SURF S, 173(1-2), 2001, pp. 84-90
Zirconium oxide (ZrO2) films have been prepared by rf reactive magnetron sp
uttering at different sputtering pressures. It is found that the monoclinic
phase is the dominant phase in the films and there is a small fraction of
tetragonal phase in the films prepared in the low pressure region. The infl
uence of sputtering pressure on the microstructure. residual stress and opt
ical properties of the films has been studied. The films have been characte
rised by X-ray diffraction (XRD), scanning electron microscopy (SEM). energ
y dispersive X-ray (EDX) and optical spectroscopy. (C) 2001 Elsevier Scienc
e B.V. All rights reserved.