Mass density determination of thin organosilicon films by X-ray reflectometry

Citation
A. Van Der Lee et al., Mass density determination of thin organosilicon films by X-ray reflectometry, APPL SURF S, 173(1-2), 2001, pp. 115-121
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
173
Issue
1-2
Year of publication
2001
Pages
115 - 121
Database
ISI
SICI code
0169-4332(20010322)173:1-2<115:MDDOTO>2.0.ZU;2-E
Abstract
The mass density of thin organosilicon films deposited by chemical vapour d eposition on silicon (0 0 1) surfaces has been determined by X-ray reflecto metry. This method does not give a unique mass density value, but instead a bandwidth of possible values and compositions that an compatible with the experimental data if the layer thickness is not larger than about 350 nm. F or thicker films thickness values obtained from ellipsometry data are used. The possible composition ranges are compared with data obtained by X-ray p hoto electron spectroscopy. (C) 2001 Elsevier Science B.V. All rights reser ved.