The mass density of thin organosilicon films deposited by chemical vapour d
eposition on silicon (0 0 1) surfaces has been determined by X-ray reflecto
metry. This method does not give a unique mass density value, but instead a
bandwidth of possible values and compositions that an compatible with the
experimental data if the layer thickness is not larger than about 350 nm. F
or thicker films thickness values obtained from ellipsometry data are used.
The possible composition ranges are compared with data obtained by X-ray p
hoto electron spectroscopy. (C) 2001 Elsevier Science B.V. All rights reser
ved.