NEW TECHNIQUE FOR CRYSTAL-GROWTH AND PHASE-TRANSITION IN TLINS2 CRYSTALS

Authors
GAMAL GA
Citation
Ga. Gamal, NEW TECHNIQUE FOR CRYSTAL-GROWTH AND PHASE-TRANSITION IN TLINS2 CRYSTALS, Crystal research and technology, 32(4), 1997, pp. 561-567
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
32
Issue
4
Year of publication
1997
Pages
561 - 567
Database
ISI
SICI code
0232-1300(1997)32:4<561:NTFCAP>2.0.ZU;2-Y
Abstract
New technique for crystal growth was designed in the present work. The electrical conductivity and Hall effect of the TInS2 single crystals, grown by this technique, were measured in the temperature range 150-5 00 K. From the measurements, the conductivity type, the energy gap, io nization energy of the impurity level. Hall mobility and carrier conce ntration were determined. Also the measurements revealed a presence of phase transition in the crystal at 189 and 220 K.