GROWTH OF BI-SR-CA-CU-O FILMS BY MOLECULAR-BEAM EPITAXY

Molecular beam epitaxy (MBE) with in-situ observation by reflection hi gh-energy electron diffraction (RHEED) is used for controlled layered growth on an atomic scale. However, it is difficult to control the gro wth continuously because of the impropriety of using RHEED which intro duces an oxygen flux. Bi-Sr-Ca-Cu-O films (2212 phase) were grown by t he MBE method with RHEED observation, and the growth was controlled by the evaporation of metals and by the flux density of the activated ox ygen. The exact observations of the composition and the radical flux i n MBE are important technologies with respect to the growth conditions necessary for stoichiometry and perfection on the atomic scale in oxi de. Such observations are made and their values controlled by precise control of the flux density by utilizing the voltage locked loop (VLL) method with MBE.