EFFECT OF IONIZATION AND ACCELERATION OF AS-SOURCE BEAM ON STRUCTURAL-PROPERTIES OF LOW-TEMPERATURE-GROWN GAAS

Single-crystal GaAs films were grown on semi-insulating GaAs (100) at substrate temperatures below 200 degrees C by using ionized source bea m epitaxy. The correlation between the properties of the films and the growth parameters, in particular, the substrate temperature, the amou nt of As-source beam ionization, and the acceleration voltage of the A s beam was investigated to elucidate the possible benefits of source b eam ionization and acceleration on low-temperature thin film growth. T he use of ionized and accelerated As-source beam greatly improved the quality of the low-temperature grown GaAs film, The surface morphology , crystallinity, and microstructure of the low temperature grown GaAs films were evaluated using in-situ reflection high energy electron dif fraction, double crystal X-ray diffraction, and cross section transmis sion electron microscopy.