GAMMA-X TRANSFER AND RESONANT-TUNNELING IN ALAS GAAS TRIPLE-BARRIER STRUCTURE/

Authors
Citation
G. Kim et al., GAMMA-X TRANSFER AND RESONANT-TUNNELING IN ALAS GAAS TRIPLE-BARRIER STRUCTURE/, Journal of the Korean Physical Society, 31(1), 1997, pp. 206-209
Citations number
13
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
31
Issue
1
Year of publication
1997
Pages
206 - 209
Database
ISI
SICI code
0374-4884(1997)31:1<206:GTARIA>2.0.ZU;2-3
Abstract
We have observed the enhanced resonant tunneling effect in the low vol tage range and the electron transfer through the X-valley-confined sta tes of the middle barrier between the two main resonant tunneling-curr ent peak voltages. The experimental observations show good agreement w ith the theoretical predictions based on the scattering theoretic appr oach of the Green's function theory, which can handle electron interla yer intervalley propagation through a layered aperiodic heterostructur e under an external bias.