Relations between the deposition conditions, the microstructure and the defects in PECVD hydrogenated amorphous carbon films; influence on the electronic density of states
Ml. Theye et al., Relations between the deposition conditions, the microstructure and the defects in PECVD hydrogenated amorphous carbon films; influence on the electronic density of states, DIAM RELAT, 10(2), 2001, pp. 182-190
The relationships between the deposition conditions, the growth mechanisms,
the microstructure and the electronic density of states of hydrogenated am
orphous carbon (a-C:H) films prepared by PECVD from hydrocarbons are not ye
t fully understood. We therefore performed a systematic study using several
complementary techniques to determine the changes in the microstructure an
d in the optical properties of a-C:H samples deposited from a dual micro-wa
ve/radio-frequency discharge in methane as a function of the negative r.f.
bias voltage applied to the substrate - V-b. The results reveal the existen
ce of two successive film growth regimes when varying - V-b from - 30 to -
600 V, i.e. when increasing the ion bombardment during deposition, which le
ad to different types of sp(2) C atoms clustering and H incorporation, but
to the same density of paramagnetic defects. Models of the a-C:H microstruc
ture are proposed in each case, and their influence on the electronic state
s density is analysed in detail. It is shown that the H content and the pro
portion of sp(2) C atoms play a minor role on the electronic properties, as
compared to the nature, the size, the number and probably the distortions
of the pi -bonded clusters. (C) 2001 Elsevier Science B.V, All rights reser
ved.