Statistical modeling of 3-D parallel-plate embedded capacitors using MonteCarlo simulation

Citation
I. Yun et al., Statistical modeling of 3-D parallel-plate embedded capacitors using MonteCarlo simulation, ETRI J, 23(1), 2001, pp. 23-32
Citations number
14
Categorie Soggetti
Information Tecnology & Communication Systems
Journal title
ETRI JOURNAL
ISSN journal
12256463 → ACNP
Volume
23
Issue
1
Year of publication
2001
Pages
23 - 32
Database
ISI
SICI code
1225-6463(200103)23:1<23:SMO3PE>2.0.ZU;2-9
Abstract
Examination of the statistical variation of integrated passive components i s crucial for designing and characterizing the performance of multichip mod ule (MCM) substrates. In this paper, the statistical analysis of parallel p late capacitors with gridded plates manufactured in a multilayer low temper ature cofired ceramic (LTCC) process is presented. A set of integrated capa citor structures is fabricated, and their scattering parameters are measure d for a range of frequencies from 50 MHz to 5 GHz, Using optimized equivale nt circuits obtained from HSPICE, mean and absolute deviation is calculated for each component of each device model. Monte Carlo Analysis for the capa citor structures is then performed using HSPICE. Using a comparison of the Monte Carlo results and measured data, it is determined that even a small n umber of sample structures, the statistical variation of the component valu es provides an accurate representation of the overall capacitor performance .