Aj. Forsyth et al., VIRTUAL SCATTERING OF HIGH-ENERGY ELECTRONS BY PLASMONS AND VALENCE-ELECTRONS IN SILICON, Acta crystallographica. Section A, Foundations of crystallography, 53, 1997, pp. 523-525
The contribution from plasmon and valence-electron scattering to the h
igher-order Fourier coefficients of the electron virtual scattering po
tential (EVSP) is shown to be non-negligible in contradiction to previ
ous assumptions. In particular, calculations are made for this contrib
ution to the EVSP C-0.g(r)(plasmon) for g = 111 in silicon. In contras
t to the elastic potential, C-0.g(r)(plasmon) is found to be highly en
ergy dependent, varying by three orders of magnitude between 20 eV and
100 keV. Whilst it is found that the contribution from plasmon scatte
ring is larger than that from tightly bound core states, the relative
contribution to the total potential is smaller than that presently res
olvable by electron experimental methods at 100 keV.