Simulation of surface morphology and defects in heteroepitaxied thin films

We have performed atomic scale simulations of heteroepitaxial growth of thi n films using the valence force field approximation and Monte Carlo techniq ues. The case of CdTe/(001)GaAs is considered. Our simulations indicate val ley formation presenting (111) facets with unstable bottoms in the early st ages of the growth. This roughening is a source of dislocation, as it appea rs to relax the elastic energy of the deposited layers by formation of V-gr ooves. We have used a calculated RHEED as an in situ control of deposited l ayers. Finally, we present the influence of an imperfect surface in the mor phology of the deposited films.