The breakdown of the temperature dependence of the photoluminescence peak position in single asymmetric quantum wells

Photoluminescence measurements performed in a wide range of temperature (10 -100 K) and optical excitation intensity (0.03-90 W/cm(2)), and self-consis tent numerical calculation is used to investigate n-doped GaAs/AlxGa1-xAs s ingle asymmetric quantum wells. Under strong optical excitation intensity, a red-shift in the recombination energy with increasing temperature is obse rved. In the weak optical excitation condition, however, a breakdown of the recombination energy shift is found. The at response was attributed to the combined effects of the temperature dependence of the bandgap energy, band bending, and bandgap renormalization.