Bi added Ba-ferrite thin films were prepared at room temperature with diffe
rent Bi composition, and successively annealed in a vacuum to crystallize.
The addition of Bi is effective in reducing the grain size. The M-s, N-c an
d grain size for Bi-BaM films were about 150 emu/cm(3),4 kOe and 40 nm, res
pectively, after annealing at 750 C for 30 seconds. A recording density D-5
0 Of 130 kfrpi was obtained with Bi-BaM thin film disk with the film thickn
ess of 100 nm.