Stacking faults in CoCrTa/Cr, CoCrPt/NiAl, and CoCrPt/Cr/NiAl films have be
en studied by electron diffraction, Interfacial lattice match and epitaxial
growth play important roles in reducing the stacking fault density. It is
found that the bicrystal media has large stacking fault densities. In the u
nicrystal media case, when good epitaxy between magnetic layer and underlay
er cannot be achieved, there are many randomly oriented grains in the magne
tic layer. These random grains have a high stacking fault density.