Modeling of misfit induced defects in Co/Cr recording media

Citation
By. Wong et al., Modeling of misfit induced defects in Co/Cr recording media, IEEE MAGNET, 36(5), 2000, pp. 2360-2362
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
36
Issue
5
Year of publication
2000
Part
1
Pages
2360 - 2362
Database
ISI
SICI code
0018-9464(200009)36:5<2360:MOMIDI>2.0.ZU;2-V
Abstract
A 2D model to study the effect of crystal orientation on interfacial struct ural misfit and Co grain defect density for hcp Co/bcc Cr thin him system h as been introduced. The magnitude of misfit depends strongly on the Co/Cr o rientation, their respective lattice parameters, the grain size and to a Le sser extend, the relative lattice orientation across the interface. However , the modeling results showed that by introducing lattice defects such as f ee stacking faults and misfit dislocations in the Co layer, one can greatly reduce this misfit and relax the interface.