Dynamic switching of tunnel junction MRAM cell with nanosecond field pulses

Authors
Sousa, RC Freitas, PP
Citation
Rc. Sousa et Pp. Freitas, Dynamic switching of tunnel junction MRAM cell with nanosecond field pulses, IEEE MAGNET, 36(5), 2000, pp. 2770-2772
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
36
Issue
5
Year of publication
2000
Part
1
Pages
2770 - 2772
Database
ISI
SICI code
0018-9464(200009)36:5<2770:DSOTJM>2.0.ZU;2-5
Abstract
Spin dependent tunnel junctions aimed for storage element in MRAM cells wer e switched between low and high resistance states using 20 ns current pulse s on two perpendicular conductors. Switching was done in quasi static mode using an external field and dynamically with field pulses created on chip. For 20 ns pulsewidths the introduction of a delay between the two pulses pr omotes the switching at lower fields and reduces the dispersion in remanent resistance values after switching.