The novel use of a memory layer in a giant magnetoresistive position sensor design

Citation
Nt. Holliday et Ew. Hill, The novel use of a memory layer in a giant magnetoresistive position sensor design, IEEE MAGNET, 36(5), 2000, pp. 2779-2781
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
36
Issue
5
Year of publication
2000
Part
1
Pages
2779 - 2781
Database
ISI
SICI code
0018-9464(200009)36:5<2779:TNUOAM>2.0.ZU;2-D
Abstract
A linear noncontact position sensor using Co/Cu giant magneto-resistance (G MR) multilayers as the sensing material and incorporating a magnetic memory layer has been designed and modeled. A magnetic head assembly acts as the position locator and the presence of a memory layer makes the throw length unlimited. A numerical model using charge sheets and finite elements has be en used to optimize the physical dimensions of the magnetic layers for diff erent magnetic materials and determine their spacing from the Co/Cu GMR sen sing material, The output from the sensor has been simulated as the head mo ves back and forth along the track, These results show that hysteresis in t he memory layer can be overcome by optimizing the head design, Using easily available materials, the modeling has shown that a device using second ant i-ferromagnetic (AF) peak Co/Cu is realizable, The model has also be used t o identify desirable material parameters for potential future engineered ma terials with the aim of utilizing high GMR first AF peak Co/Cu material in the sensor.