Magnetoresistance in ballistic nanocontacts and its manipulation in electrodeposited nanometric Ni contacts

Citation
N. Garcia et al., Magnetoresistance in ballistic nanocontacts and its manipulation in electrodeposited nanometric Ni contacts, IEEE MAGNET, 36(5), 2000, pp. 2833-2838
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
36
Issue
5
Year of publication
2000
Part
1
Pages
2833 - 2838
Database
ISI
SICI code
0018-9464(200009)36:5<2833:MIBNAI>2.0.ZU;2-C
Abstract
We report comprehensive experimental studies on ballistic magnetoresistance (BMR) in nanocontacts of different materials, We show that BMR values > 20 0 % can be achieved in ballistic nanocontacts of ferromagnet such as nickel and cobalt whilst the nanocontacts of dirty ferromagnetic materials such a s Heusler alloy exhibit very small magnetoresistance (MR) at room temperatu re (RT) and low applied field. The reason for this is that, the BMR is a no nadiabatic process, but in the dirty cases the domain wall (DW) thickness l ambda is larger than the mean free path l for spin reversal hence the elect rons can adiabatically follow the magnetization change when they traverse t he DW resulting in negligible DW scattering. We also show that in an electr odeposited stable nanoscopic nickel contact it is possible to manipulate th e MR by applying current pulses and external magnetic field. We discuss the origin of this effect in terms of combined effect of current induced and e xternal field.