Spin valves of high quality were fabricated by a two-step deposition proced
ure, Lower sublayers (i.e., buffer layer Ta/free layer NiFe/interlayer Cu)
are deposited at a lower argon pressure, which promoted formation of strong
(111) textures, smooth interfaces and dense Cu film, and upper sublayers (
i.e., pinned layer NiFe/pinning layer FeMn/cover Ta) are deposited at a hig
her pressure, which promoted small grains and less diffusive interface. The
independent control of the magnetoresistance, the ferromagnetic interlayer
coupling, and exchange biasing was achieved by improving the interfacial a
nd crystalline structures of the spin valves.