Modeling and experiment of transport properties of spin-valves with synthetic antiferromagnet

Citation
J. Chen et al., Modeling and experiment of transport properties of spin-valves with synthetic antiferromagnet, IEEE MAGNET, 36(5), 2000, pp. 2885-2887
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
36
Issue
5
Year of publication
2000
Part
1
Pages
2885 - 2887
Database
ISI
SICI code
0018-9464(200009)36:5<2885:MAEOTP>2.0.ZU;2-A
Abstract
Both band structure calculations and experiments show that the giant-magnet oresistance (GMR) of a spin-valve with a synthetic-antiferromagnetic pinned layer is smaller than that with a single pinned layer. This smaller GMR is shown to come from the s-d scattering in the Ru layer and part of the pinn ed layer that has the opposite moment direction. Half of the synthetic-anti ferromagnet does not contribute to the GMR and only shunts the current.