Sensitive asymmetrical MI effect in crossed anisotropy sputtered films

Citation
K. Ueno et al., Sensitive asymmetrical MI effect in crossed anisotropy sputtered films, IEEE MAGNET, 36(5), 2000, pp. 3448-3450
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
36
Issue
5
Year of publication
2000
Part
1
Pages
3448 - 3450
Database
ISI
SICI code
0018-9464(200009)36:5<3448:SAMEIC>2.0.ZU;2-C
Abstract
This paper reports experimental results to obtain a sensitive and asymmetri cal MI effect in crossed anisotropy sputtered films magnetized with a de-bi ased ac or pulse current. The sensitive and asymmetrical MI effect occurs, because the crossed anisotropy films induce spiral magnetic anisotropy, The crossed anisotropy film (Co72Fe8B20) was made on a glass substrate using d e sputtering with two layers having 4.5 mum thickness each applying a de fi eld of 21 kA/m along with a designed anisotropy direction. A linear MI char acteristic with a field detection sensitivity of 0.15 %/(Nm) (12 %/Oe) was obtained, which realizes a sensitive linear field sensor without any dr bia s field.