Preparation, structure, and electrical properties of thin In1-xCdxSb (x=0.001-0.003) films

Citation
On. Pashkova et al., Preparation, structure, and electrical properties of thin In1-xCdxSb (x=0.001-0.003) films, INORG MATER, 37(2), 2001, pp. 105-107
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
37
Issue
2
Year of publication
2001
Pages
105 - 107
Database
ISI
SICI code
0020-1685(200102)37:2<105:PSAEPO>2.0.ZU;2-S
Abstract
Thin films of In1-xCdxSb solid solutions were produced by directional solid ification and were characterized by x-ray diffraction and electrical measur ements. The results indicate that only a fraction of the Cd atoms substitut e on the In site, while the rest of the atoms are incorporated interstitial ly. The lattice parameter of the solid solutions is shown to be negatively correlated with their resistivity.