Effect of low-temperature diffusion annealing on the properties of PbSnTeIn epilayers

A procedure was proposed for low-temperature vapor-phase In doping of Pb1-x SnxTe films grown by molecular-beam epitaxy on BaF2 substrates. Diffusion a nnealing was call icd out in a hydrogen atmosphere in the presence of a vap or source identical in composition to the film and a dopant source at tempe ratures which were, in most cases, no higher than the growth temperature (3 00-460 degreesC). The effect of diffusion annealing on the composition, tra nsport properties, and homogeneity of both undoped and In doped films was e xamined. The results suggest that indium is transported in the vapor phase in the form of indium tellurides resulting from the reaction between Te vap or and liquid In.