Small signal modeling of GaAsPIN diodes aided by electromagnetic analysis

A systematic procedure is described for determination of GaAs PIN diode equ ivalent circuit models from measured S-parameter data combined with an elec tromagnetic analysis of the feed structure. A new parasitic and intrinsic m odel topology is proposed, and found to be better suited than prior models for the particular GaAs PIN structures considered in this work. Models were developed for forward bias currents ranging from 0.01 to 100 mA, and examp le measured and modeled results are included to validate the approach. (C) 2001 John Wiley & Sons, Inc.