Bias-dependent small-signal modeling of GaAsPIN diodes

A new bias-dependent small-signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limit ers. The equivalent circuit parameters are extracted from bias-dependent S- parameters measured from 1 to 26 GHz for 35 bias currents. Bias-dependent e quations are then curve fitted, and then incorporated into a commercially a vailable computer-aided design (CAD) simulator. Measured and modeled data t rack each other very well over a range of bias conditions. (C) 2001 John Wi ley & Sons, Inc.