The stresses induced by hydrogen absorption in Pd nanofilms were studied by
the electrochemical quartz crystal microbalance (EQCM) and bending beam me
thods. In the EQCM method, hydrogen was charged electrolytically into a Pd
nanofilm that was coated on an AT- or ET-cut quartz crystal. For Pd films i
n a thickness of 120-nm on the AT-cut and 158-nm on the BT-cut quartz cryst
al, compressive stresses of 1.07x10(3) MPa and 1.70X10(3) MPa, respectively
, were measured. With the bending beam technique, the bending curvature of
the Si substrate during gas-phase hydrogenation was monitored. The maximum
compressive stress induced in a 50-nm Pd film on the Si substrate during hy
drogenation at 0.2 MPa of hydrogen gas was 944 MPa. When hydrogen was desor
bed from the film, a tensile stress of 708 MPa in the film was observed. Wh
en the thickness of the Pd Nm was increased to 130 nm, peeling of the Pd fi
lm from the substrate occurred. (C) 2001 Elsevier Science B.V. All rights r
eserved.