Large-scale SiO2 nanowires were synthesized by using a simple but an effect
ive approach at low temperature. Scanning electron microscopy, transmission
electron microscopy, and x-ray photoelectron spectroscopy were employed to
characterize the samples. The results indicated that SiO2 nanowires with a
uniform diameter of about 20 nm and a length up to 10 mum have been synthe
sized. Photoluminescence measurement showed that the SiO2 nanowires emitted
blue light at 2.8 and 3.0 eV. The possible growth process of the SiO2 nano
wires is discussed. Using this method, large panels of SiO2 nanowires can b
e made under conditions that are suitable for device fabrication.