Analytical model of Fowler-Nordheim tunnel injection for design and simulation of complex memories circuits

Authors
Yao, T Bouchakour, R Billiot, G
Citation
T. Yao et al., Analytical model of Fowler-Nordheim tunnel injection for design and simulation of complex memories circuits, J NON-CRYST, 280(1-3), 2001, pp. 92-95
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
280
Issue
1-3
Year of publication
2001
Pages
92 - 95
Database
ISI
SICI code
0022-3093(200102)280:1-3<92:AMOFTI>2.0.ZU;2-H
Abstract
We propose a new compact analytical model of Fowler-Nordheim injection curr ent including depletion and quantum oscillations effects for design and sim ulation of complex memory circuits. This model is able to simulate the Fowl er-Nordheim injection current whatever the source and the well of the injec tion in the metal oxide silicon transistor with very low errors and low tim e cost. (C) 2001 Published by Elsevier Science B.V.