A new physical-based compact model of floating-gate EEPROM cells

A model for static and transient simulations of an electrically erasable pr ogrammable read-only memory (EEPROM) cell has been developed. This physical compact model is based on charge sheet approach which is able to describe the complete electrical properties of the cell. In this model the charge ne utrality, including the charge trapped on the floating gate, is applied to determine the surface potential. From the surface potential, related to the terminal voltages, the drain current and the different charges present in the cell structure can be calculated. This model has been successfully impl emented in common circuit simulators (Eldo and Saber) and used for the stud y of the write/erase operations in an EEPROM cell. (C) 2001 Elsevier Scienc e B.V. All rights reserved.