We have investigated conduction properties of gate oxides in metal-oxide-se
miconductor structures in which dielectric breakdown has occurred. The meas
urements were performed on p- and n-type substrate samples with oxide thick
ness ranging from 2.0 to 13.5 nm. It is shown that the post-breakdown diffe
rential conductance has two typical modes, which, in terms of the physics o
f mesoscopic conducting systems, are referred to as linear and non-linear c
onduction regimes. In this work, we propose an analytic model for the condu
ctance based on the electron transmission properties of quantum point conta
cts, which captures the essential features and consistently explains both b
reakdown modes. (C) 2001 Elsevier Science B.V. All rights reserved.