Effects of ArF excimer irradiation on single energy and multi energy Ge ion implanted silica

Some of the effects of ArF excimer irradiation on the optical bands produce d by single energy (4 MeV) and multi energy (highest energy 4 MeV) Ge impla ntations in silica (Type III) have been determined. Ge ions were implanted at 4 MeV with nominal doses of 1.25, 2.5 and 5.0 x 10(15) ions/cm(2). A sec ond series of samples was made using implant energies ranging from 4 to 0.7 MeV. The doses at each energy were varied to maintain an approximate const ant implant species concentration with the total number of ions implanted b eing 10 x 10(15) and 5 x 10(15) cm(-2) for concentrations of 0.042 and 0.02 1 at,%, respectively. The optical absorption was measured from 2.8 to 6.5 e V. The absorption of samples was then measured after 6.4 eV ArF excimer rad iation with a fluence of 44 mJ/cm(2) per pulse for pulse totals of 3, 11 an d 31. We fit the observed spectra for the as-implanted samples and the samp les after each ArF exposure to the minimum number of bands attributed to in trinsic states in SiO2 required to fit the data within +/-2%. The magnitude and response of these absorption bands to the ArF irradiation was a functi on of dose and implant conditions. (C) 2001 Elsevier Science B.V. All right s reserved.