Synthesis of ZnSxSe1-x(0 < x < 1) nanocrystalline thin filmsby high-pressure sputtering

Citation
A. Ganguly et al., Synthesis of ZnSxSe1-x(0 < x < 1) nanocrystalline thin filmsby high-pressure sputtering, J PHYS D, 34(4), 2001, pp. 506-513
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
4
Year of publication
2001
Pages
506 - 513
Database
ISI
SICI code
0022-3727(20010221)34:4<506:SOZ<X<>2.0.ZU;2-7
Abstract
ZnSxSe1-x (0 < x < 1) nanocrystalline films were deposited onto quartz subs trates by a de magnetron sputtering technique. The optical properties of th e films were studied at room temperature (similar to 300 K). The optical ab sorption was found to be dominated by the combined effects of optical losse s due to absorption and scattering. The absorption spectra indicated a blue shift, the extent of which depended upon the crystallite size of the film. The electrical conductivity of the films deposited onto the quartz substra te was measured in the temperature range of 150-300 K. It was observed that the low-temperature conductivity could be explained by hopping of the char ge carriers in the Coulomb gap, while at elevated temperature Mott's hoppin g was the predominant mode of conduction in these films. A distinct cross-o ver from Efros-Shklovskii to Mott's hopping was observed for all the films.