The temperature dependence of the Youngs modulus of MgSiN2 and AlN was meas
ured between 293 and 973 K using the impulse excitation method and compared
with literature data reported for Si3N4 The data could be fitted with E =
E-o - B.T exp(-T-o/T). The values of the fitting parameters E-o and T-o are
related to the Debye temperature, and the parameter B to the harmonic char
acter of the bond, (C) 2001 Elsevier Science Ltd. All rights reserved.