Study of indium tin oxide thin film for separative extended gate ISFET

Authors
Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation
Lt. Yin et al., Study of indium tin oxide thin film for separative extended gate ISFET, MATER CH PH, 70(1), 2001, pp. 12-16
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
70
Issue
1
Year of publication
2001
Pages
12 - 16
Database
ISI
SICI code
0254-0584(20010402)70:1<12:SOITOT>2.0.ZU;2-X
Abstract
In this study, the indium tin oxide (ITO) was used as a sensitive film for H+ ion sensitive field effect transistor (ISFET). The sensitive characteris tics of ITO glass structure for separative extended gate ion sensitive dd e ffect transistors (EGFET) were studied. ITO thin film is used for the first time as a H+ ion sensitive film which has a linear pH sensitivity of Nerst ern response, about 58 mV/pH, between pH 2 and pH 12. (C) 2001 Elsevier Sci ence B.V. All rights reserved.