Structural and electrical transport properties of CdS0.9Se0.1 : In thin films: effect of film thickness

Thin films of CdS0.9Se0.1:ln (0.05 mol%) of various thicknesses have been d eposited on to the clean glass substrates using a chemical deposition techn ique. Composition analysis showed that films were sulphur deficit. Structur al investigations on these films revealed the polycrystalline nature of the films with the presence of hexagonal CdS0.9Se0.1 and cubic CdS phases. Gra in size increased with the film thickness. Electrical conductivity and ther moelectric power (TEP) measurements have been carried out in 300-550 K temp erature range. The conduction activation energy is found to be thickness-de pendent, TEP measurements showed n-type conduction. Carrier concentration i ncreased with thickness. (C) 2001 Elsevier Science B.V. AII rights reserved .