Synthesis and characterisation of free standing, one-dimensional, Al-SiC based functionally gradient material

Citation
M. Gupta et al., Synthesis and characterisation of free standing, one-dimensional, Al-SiC based functionally gradient material, MATER SCI T, 17(2), 2001, pp. 195-200
Citations number
36
Categorie Soggetti
Material Science & Engineering
Journal title
MATERIALS SCIENCE AND TECHNOLOGY
ISSN journal
02670836 → ACNP
Volume
17
Issue
2
Year of publication
2001
Pages
195 - 200
Database
ISI
SICI code
0267-0836(200102)17:2<195:SACOFS>2.0.ZU;2-8
Abstract
In the present study, an aluminium-silicon carbide based functionally gradi ent material was successfully synthesised using a new technique termed here as gradient slurry disintegration and deposition process. The gradient of SiC was successfully established using this technique for 21 wt-%SiC. The r esults were confirmed using microstructural characterisation techniques, mi crohardness measurements, and wear rate determination. The results further revealed that an increase in the weight percentage of silicon carbide parti culates along the deposition direction lead to a concurrent increase in por osity, degree of clustering, and microhardness while the nature of silicon carbide/aluminium interfacial integrity remained the same. The results of w ear rate determination indicated that a difference of similar to9.53 vol.-% SiC on the opposite faces of the functionally gradient material led to the wear resistance increasing to similar to 31.5 x that of the high aluminium end. An attempt is made to interrelate the processing methodology, microstr ucture, microhardness, and wear rate results obtained in the present study.