A brief review of the semi-classical Monte Carlo method for semiconductor d
evice simulation is given, covering the standard Monte Carlo algorithms, va
riance reduction techniques, the self-consistent solution, and the physical
semiconductor model including band structure and scattering mechanisms. Th
e link between physically-based Monte Carlo methods and the numerical metho
d of Monte Carlo integration is considered. The integral representations an
d the conjugate equations are presented for the transient and the steady-st
ate Boltzmann equation. From these equations the standard algorithms as wel
l as a variety of new algorithms can be derived in a formal way. (C) 2001 I
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