The Monte Carlo method for semi-classical charge transport in semiconductor devices

Citation
H. Kosina et M. Nedjalkov, The Monte Carlo method for semi-classical charge transport in semiconductor devices, MATH COMP S, 55(1-3), 2001, pp. 93-102
Citations number
61
Categorie Soggetti
Engineering Mathematics
Journal title
MATHEMATICS AND COMPUTERS IN SIMULATION
ISSN journal
03784754 → ACNP
Volume
55
Issue
1-3
Year of publication
2001
Pages
93 - 102
Database
ISI
SICI code
0378-4754(20010215)55:1-3<93:TMCMFS>2.0.ZU;2-9
Abstract
A brief review of the semi-classical Monte Carlo method for semiconductor d evice simulation is given, covering the standard Monte Carlo algorithms, va riance reduction techniques, the self-consistent solution, and the physical semiconductor model including band structure and scattering mechanisms. Th e link between physically-based Monte Carlo methods and the numerical metho d of Monte Carlo integration is considered. The integral representations an d the conjugate equations are presented for the transient and the steady-st ate Boltzmann equation. From these equations the standard algorithms as wel l as a variety of new algorithms can be derived in a formal way. (C) 2001 I MACS. Published by Elsevier Science B.V. All rights reserved.