A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC

A Monte Carlo (MC) study of the hole transport in 4H-SiC is presented using three different MC models. The three models represent different approximat ion levels regarding band structure and scattering formulation. The most ad vanced model is a completely k-vector dependent fu:ll band model while the simplest model uses three analytical bands with energy dependent scattering rates. The intermediate MC model uses a full band structure calculated usi ng a simple k-p formulation. A comparison between the models in terms of co upling constants, scattering rate, temperature dependent mobility and satur ation velocity is presented. (C) 2001 IMACS. Published by Elsevier Science B.V. All rights reserved.