Effective modeling of temperature-dependent body current for submicron devices under Bi-MOS hybrid-mode operation

In a Bipolar/MOS hybrid-mode environment, lateral p-n-p BJT in an active pM OS structure is employed for its high current gain and simple technology. I n these designs, the presence of positive source-body voltage (V-SB) causes the body current characteristics to deviate from that predicted by models in existing literature. In this paper, a new body current model suitable fo r hybrid-mode devices is developed. Temperature dependence of the body curr ent in the range from 223 to 398 K has also been modeled. In addition, the effects of temperature and positive V-SB on parameters such as threshold vo ltage, effective channel length, external series resistance and saturation drain voltage, have also been discussed in the model. A multitude of experi mental data has been presented to demonstrate the validity of the proposed model for a wide range of biases. temperatures and channel lengths. (C) 200 1 Elsevier Science Ltd. All rights reserved.