Surface-potential-based charge sheet model for the polysilicon thin film transistors without considering kink effect

An expression for surface potential for Poly-Silicon Thin Film Transistors (Poly-Si TFT) is derived. The surface potential thus calculated numerically as a function of terminal voltage is used in the proposed de charge sheet model for Poly-Si TFT to determine the drain current as a of function termi nal voltage in the linear and saturation regions using single expression. T he model is verified using available experimental data for output and trans fer characteristics for different Poly-Si TFTs and shows good agreement wit h the experimental data. However, the proposed model does not consider the kink effect which is dominant at higher drain to source voltage. (C) 2001 E lsevier Science Ltd. All rights reserved.