Combining FDTD simulations with measurements of microstrip ring resonatorsfor characterization of low- and HIGH-K dielectrics at microwaves

Citation
E. Semouchkina et al., Combining FDTD simulations with measurements of microstrip ring resonatorsfor characterization of low- and HIGH-K dielectrics at microwaves, MICROW OPT, 29(1), 2001, pp. 21-24
Citations number
10
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
29
Issue
1
Year of publication
2001
Pages
21 - 24
Database
ISI
SICI code
0895-2477(20010405)29:1<21:CFSWMO>2.0.ZU;2-L
Abstract
This paper shows how the dielectric constant of alumina and rutile substrat es at microwave frequencies can be accurately determined by fitting the sim ulated S-parameter spectra of microstrip ring resonators, generated via the finite-difference time-domain (FDTD) method, to experimentally measured da ta. The proposed method does not require the determination of the effective dielectric constant and the approximate closed-form expressions to find th e true permittivity of the substrate. This is essential for the characteriz ation of high-K dielectric materials at high frequencies when the closed-fo rm expressions are invalid. (C) 2001 John Wiley & Sons, Inc.