Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials

Localization and dephasing of conduction electrons in a low-carrier-density ferromagnet due to scattering on magnetic fluctuations is considered. We c laim the existence of the "mobility edge", which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the "mobility edge" crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in fer romagnetic semiconductors and manganite pyrochlores. (C) 2001 Elsevier Scie nce B.V. All rights reserved.