Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism

Citation
Dp. Yu et al., Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism, PHYSICA E, 9(2), 2001, pp. 305-309
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
9
Issue
2
Year of publication
2001
Pages
305 - 309
Database
ISI
SICI code
1386-9477(200102)9:2<305:CGOOAS>2.0.ZU;2-0
Abstract
Highly oriented amorphous silicon nanowires (a-SiNWs) were grown on Si (111 ). The length and diameter of oriented SiNWs are almost uniform, which are 1 mum and 25 nm, respectively. Different from the well-known vapor-liquid-s olid (VLS) for conventional whisker growth, it was found that growth of the a-SiNWs was controlled by a solid-liquid-solid mechanism (SLS). This synth esis method is simple and controllable. It may be useful in large-scale syn thesis of various nanowires. (C) 2001 Elsevier Science B.V. All rights rese rved.