Highly oriented amorphous silicon nanowires (a-SiNWs) were grown on Si (111
). The length and diameter of oriented SiNWs are almost uniform, which are
1 mum and 25 nm, respectively. Different from the well-known vapor-liquid-s
olid (VLS) for conventional whisker growth, it was found that growth of the
a-SiNWs was controlled by a solid-liquid-solid mechanism (SLS). This synth
esis method is simple and controllable. It may be useful in large-scale syn
thesis of various nanowires. (C) 2001 Elsevier Science B.V. All rights rese
rved.