Infrared optical constants and dielectric response functions of silicon nitride and oxynitride films

Citation
Mk. Gunde et M. Macek, Infrared optical constants and dielectric response functions of silicon nitride and oxynitride films, PHYS ST S-A, 183(2), 2001, pp. 439-449
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
183
Issue
2
Year of publication
2001
Pages
439 - 449
Database
ISI
SICI code
0031-8965(200102)183:2<439:IOCADR>2.0.ZU;2-A
Abstract
The complex refractive indices of thick plasma-enhanced chemical vapour dep osited silicon nitride and oxynitride films were determined within the infr ared spectral region (4000-400 cm(-1) i.e. 2.5-25 mum) and used further to obtain their complex dielectric response functions. The imaginary part, i.e . the so-called energy-loss-function was analysed to get accurate phonon da ta of the amorphous layer. This way, TO-phonon frequencies, half-widths, an d intensities of characteristic infrared absorptions were determined for ea ch film. The dependence of the obtained data upon the variation of chemical /physical structure of the amorphous lattice was discussed.