Effect of modulated antiparallel domain patterns on the dielectric permittivity in epitaxial Bi2Ti4O11-Bi4Ti3O12 films - art. no. 104102

We have used the pulsed laser deposition technique to grow a series of c-ax is oriented xBi(2)Ti(4)O(11)-(1-x)Bi4Ti3O12 films at the morphotropic phase boundary on LaNiO3 electroded SrTiO3 (100) substrates. The films are alter native stacking of ferroelectric Bi4Ti3O12 and Bi2Ti4O11 layers. P-E hyster esis loop and capacitance versus voltage measurements show antiparallel dom ain orientations with adjacent Bi4Ti3O12 and Bi2Ti4O12 layers, which enhanc es the dielectric permittivity of ferroelectric capacitors considerably. Ra man studies indicate different symmetry phases of constituent Bi4Ti3O12 in Bi2Ti4O11 and Bi4Ti3O12 sublayers. The expected internal stresses reorient polar domains and prefer domain orientations in the discrete ferroelectric layers.