Specific features of thermal resistance of silicon in the temperature range 105-130 K

Careful experimental investigations into the behavior of the thermal resist ance of single-crystal silicon are carried out in the immediate vicinity of the temperature of an anharmonicity sign inversion (T-i = 121.1 K), where phonon thermal resistance approaches zero. An anomalous positive deviation of the total thermal resistance (W) from the linear part of the temperature dependence with a maximum at 121.1 K is found in the temperature range 105 -130 K. The temperature behavior of W in this range indicates that the mean free path of phonons is limited by a characteristic size of structural def ects and that its temperature dependence exhibits specific features in the vicinity of T-i. It is established that the character of the temperature de pendence of W above and below T-i is different. A linear functional relatio n between the total thermal resistance and the isobaric thermal strain is r evealed at positive and negative anharmonicities of atomic vibrations. (C) 2001 MAIK "Nauka/Interperiodica".