Surface acoustic wave attenuation by the localized states of a two-dimensional carrier system. in a magnetic field

Citation
Vw. Rampton et al., Surface acoustic wave attenuation by the localized states of a two-dimensional carrier system. in a magnetic field, SEMIC SCI T, 16(3), 2001, pp. 136-139
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
3
Year of publication
2001
Pages
136 - 139
Database
ISI
SICI code
0268-1242(200103)16:3<136:SAWABT>2.0.ZU;2-9
Abstract
The surface acoustic wave attenuation and dispersion have been measured as a function of magnetic field for both a two-dimensional electron system and a two-dimensional hole system at frequencies between 100 and 1100 MHz. The experiments were made at 350 mK in the quantum Hall regime. In the region of filling factor one where the quasi-de conductivity becomes very small, a n attenuation and dispersion is found which we attribute to localized carri er states. We estimate that the relaxation time of the localized electrons is about 60 ps while the relaxation time for localized holes is about 20 ps .