Electrical properties of O-2/NO-plasma grown oxynitride films on partiallystrain compensated Si/Si1-x-yGexCy/Si heterolayers

Authors
Maikap, S Ray, SK Banerjee, SK Maiti, CK
Citation
S. Maikap et al., Electrical properties of O-2/NO-plasma grown oxynitride films on partiallystrain compensated Si/Si1-x-yGexCy/Si heterolayers, SEMIC SCI T, 16(3), 2001, pp. 160-163
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
3
Year of publication
2001
Pages
160 - 163
Database
ISI
SICI code
0268-1242(200103)16:3<160:EPOOGO>2.0.ZU;2-P
Abstract
Ultra-thin (<100 <Angstrom>) gate quality oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers at low temp erature using microwave NO/O-2-, O-2/NO- and O-2/NO/O-2-plasma. The change in gate voltage (DeltaV(G)), flatband voltage (DeltaV(FB)) and normalized c urrent (DeltaI(g)/I-g) during constant current stressing are studied using a metal-insulator-semiconductor structure. It is found that the charge trap ping properties and charge to breakdown (Q(BD)) under Fowler-Nordheim const ant current stressing are significantly improved in O-2/NO-plasma grown oxy nitride film compared to NO/O-2- and O-2/NO/O-2-plasma grown oxynitride fil ms.